bcp68 1 2005-07-14 npn silicon af transistor ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary type: bcp69 (pnp) vps05163 1 2 3 4 type marking pin configuration package bcp68 bcp68-25 bcp 68 bcp 68-25 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot223 sot223 maximum ratings parameter symbol values unit collector-emitter voltage v ceo 20 v collector-emitter voltage v ces 25 collector-base voltage v cbo 25 emitter-base voltage v ebo 5 dc collector current i c 1 a peak collector current i cm 2 base current i b 100 ma peak base current i bm 200 total power dissipation, t s = 124 c p tot 1.5 w junction temperature t j 150 c storage temperature t st g -65 .. 150 thermal resistance junction - soldering point 1) r thjs 17 k/w 1 for calculation of r thja please refer to application note thermal resistance
bcp68 2 2005-07-14 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. characteristics collector-emitter breakdown voltage i c = 30 ma, i b = 0 v (br)ceo 20 - - v collector-emitter breakdown voltage i c = 10 a, v be = 0 v (br)ces 25 - - collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 25 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 25 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 25 v, i e = 0 , t a = 150 c i cbo - - 100 a dc current gain 1) i c = 5 ma, v ce = 10 v h fe 50 - - - dc current gain 1) i c = 500 ma, v ce = 1 v bcp68 bcp68-25 h fe 85 160 - 250 375 375 dc current gain 1) i c = 1 a, v ce = 1 v h fe 60 - - collector-emitter saturation voltage1) i c = 1 a, i b = 100 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 5 ma, v ce = 10 v i c = 1 a, v ce = 1 v be(on) - - 0.6 - - 1 ac characteristics transition frequency i c = 100 ma, v ce = 5 v, f = 100 mhz f t - 100 - mhz 1) pulse test: t 300 s, d = 2%
bcp68 3 2005-07-14 transition frequency f t = f ( i c ) v ce = 5v 10 ehp00275 bcp 68 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55 total power dissipation p tot = f ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 0.3 0.6 0.9 1.2 w 1.8 p tot collector cutoff current i cbo = f ( t a ) v cb = 25v 0 10 ehp00276 bcp 68 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3 dc current gain h fe = f ( i c ) v ce = 1v 10 ehp00277 bcp 68 0 4 10 ma 0 10 3 10 5 5 10 1 10 2 10 1 c fe h 2 10 ?c 5 -50 100 ?c 25 ?c 3 10
bcp68 4 2005-07-14 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 ehp00278 bcp 68 cesat v 0.4 v 0.8 10 0 10 1 3 10 5 c ma ?c 5 2 10 0.2 0.6 10 4 5 100 25 ?c ?c -50 base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 ehp00279 bcp 68 be v c 0.2 0.4 0.6 0.8 1.2 v sat 2 10 1 10 0 ma 10 3 10 4 10 5 5 5 ?c 100 25 -50 ?c ?c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00280 bcp 68 -6 -5 10 1 10 s -1 10 2 10 3 10 5 5 10 -4 10 -3 10 -2 10 1 0.0 0.2 0.1 0.05 0.02 0.01 0.005 = d 0.5 tot max tot p dc p p t t p = d t t p t
bcp68 5 2005-07-14 package sot223 package outline foot print marking layout packing code e6327: reel ?180 mm = 1.000 pieces/reel code e6433: reel ?330 mm = 4.000 pieces/reel 0.25 0.1 0.7 4.6 m a 1 2 2.3 3 a 3 4 0.1 6.5 0.2 din 6784 +0.2 acc. to 0.0 4 0.25 0.5 min. m b 0.28 0.1 max. 15 ? 7 0.3 1.6 0.1 3.5 0.2 b max. 1.2 1.1 1.4 1.4 4.8 3.5 manufacturer date code (year/calendarweek) type code example 2003, july bcp52-16 pin 1 8 0.3 max. 6.8 7.55 12 1.75 pin 1
bcp68 6 2005-07-14 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen ? infineon technologies ag 2005. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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